
IXTH48P20P
IXTT48P20P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = -10V, I D = 0.5 ? I D25 , Note 1
19
32
5400
S
pF
C oss
V GS = 0V, V DS = - 25V, f = 1MHz
1040
pF
1
2
3
?P
C rss
170
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3 Ω (External)
30
46
67
27
ns
ns
ns
ns
Terminals: 1 - Gate
e
2 - Drain
Q g(on)
Q gs
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
103
23
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
R thCS
40
0.21
nC
0.27 ° C/W
° C/W
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
I S V GS = 0V
I SM Repetitive, pulse width limited by T JM
Characteristic Values
Min. Typ. Max.
- 48 A
- 192 A
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
V SD
t rr
Q RM
I RM
I F = - 24A, V GS = 0V, Note 1
I F = - 24A, -di/dt = -100A/ μ s
V R = -100V, V GS = 0V
260
4.2
- 32.2
- 3.3
V
ns
μ C
A
TO-268 (IXTT) Outline
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
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